N+2

When TSMC initially introduced its N2 (2 nm class) process technology earlier this month, the company outlined how the new node would be built on the back of two new cutting-edge fab techniques: gate-all-around transistors, and backside power rails. But, as we've since learned from last week's EU symposium, TSMC's plans are a bit more nuanced than first announced. Unlike some of their rivals, TSMC will not be implementing both technologies in the initial version of their N2 node. Instead, the first iteration of N2 will only be implementing gate-all-around transistors, with backside power delivery to come with a later version of the node. So far, TSMC has mentioned two distinctive features of N2: nano sheet gate-all-around (GAA) transistors, and backside power rails. GAA transistors...